Mr Shubhadeep Biswas
Assistant Professor Guru Nanak Institute of Technology, KolkataGoogle Scholar
Expertise
Electrical and Electronic Engineering
GRAPHENE FIELD EFFECT TRANSISTOR Single layer graphene transistors demonstrate low ION/IOFF ratio at room temperature. While they show promising results when applied for high-speed analog circuits in the GHz range. Opening the band gap by means of quantum confinement improves the ION/IOFF dramatically, but at the cost of decrease of device channel mobility. Therefore, graphene based FET research will be concentrated around the band-gap opening in bilayer graphene by means of vertical electric fi
Personal Information
Mr Shubhadeep Biswas
Male
29 PANCHANAN TALA ROAD Guru Nanak Institute of Technology, 157/F, Nilgunj Rd, Sahid Colony, Panihati
Kolkata, West Bengal, India - 700114
Experience
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Assistant Professor
Department of Electronics and Communication Engineering
Guru Nanak Institute of Technology, Kolkata
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Faculty
Electronics and Telecommunication
The George Telegraph Training Institute
Honours and Awards
2014
Best Debutant
National Entrepreneurship Network
2008
First Position
Office of the Sub divisional Officer, Barrackpore, North 24 Parganas, West Bengal
2014
Best Debutant
National Entrepreneurship Network
2008
First Position
Office of the Sub divisional Officer, Barrackpore, North 24 Parganas, West Bengal
